US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Dec. 16 for "Memory device and method for manufacturing memory device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,609, issued on Dec. 16, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device and method for manufacturing memory device" was invented by Zhongming Liu (Hefei, China), Yexiao Yu (Hefei, China) and Longyang Chen (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method for manufacturing a memory device are provided. The memory device includes: a substrate, and a plurality of first capacitors embedded in the substrate; a plurality of first vertical transistors and a plurality of second vertical transistors, in which the plurality of first vertical transistors and the plurality of second vertic...