US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 4 for "Package structure and method for manufacturing same, semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,702,045, issued on Aug. 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Package structure and method for manufacturing same, semiconductor device" was invented by Kai Tian (Hefei, China), Liang Chen (Hefei, China) and Mingxing Zuo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A packaging structure, a method for manufacturing the same and a semiconductor device are provided. The packaging structure includes a redistribution layer electrically connected with an interconnection layer of a semiconductor functional structure, and an insulating layer covering and exposing part of the redistribution layer. The exposed part o...