US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 26 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,935, issued on Aug. 26, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Chih-Wei Chang (Hefei, China) and Jie Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and proposes a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a base and a communication portion, the communication portion being located in the base and including a first connection layer, a second connection layer, and a third connection layer, the second connecti...