US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 25 for "Semiconductor structure, its read/write controlling and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,733, issued on Aug. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, its read/write controlling and method of making the same" was invented by Qinghua Han (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed semiconductor structure includes: a substrate and a data line on the substrate, the data line extends along a first direction; the first transistor and the second transistor located on the first transistor's side away from the data line; each of the first transistor and the second transistor includes: a semiconductor column, the semiconductor column is located on a pa...