US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,798, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yizhi Zeng (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate and a contact structure. The substrate includes a shallow trench isolation (STI) structure and active structures separated by the STI structure. The contact structure includes a first contact structure and a second contact structure that are laminated, where the first con...