US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,827, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing same" was invented by Honglei Chen (Hefei, China) and Hongwei Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The method includes the following operations. A substrate is provided, in which the substrate includes a device region and an alignment region. A layer stack covering the device region and the alignment region is formed on the substrate, in which the layer stack at least in...