US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,140, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for forming same" was invented by Youming Liu (Hefei City, China) and Deyuan Xiao (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a plurality of word lines located on a top surface of the substrate. Each of the word lines extends in a direction perpendicular to the top surface of the substrate. The plurality of word lines are arranged at intervals along a first direction. Any two adjacent ones of the word lines are arranged in an at least partially st...