US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, test structure, manufacturing method and test method" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,811, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, test structure, manufacturing method and test method" was invented by Deyuan Xiao (Hefei, China), Guangsu Shao (Hefei, China), Yi Jiang (Hefei, China), Xingsong Su (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor structure, a test structure, a manufacturing method and a test method. The semiconductor structure includes a substrate, which includes multiple pillars spaced along a first direction by first trenches; second trenches formed at opposite sides along ...