US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Method of forming photoresist pattern, and photoresist structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,607,935, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method of forming photoresist pattern, and photoresist structure" was invented by Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a method of forming a photoresist pattern, and a photoresist structure. The method of forming a photoresist pattern includes: forming a photoresist structure on a target layer, where the photoresist structure includes a photoresist layer provided on the target layer, and an optical wave transmission layer provided on t...