US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES on Jan. 20 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,452, issued on Jan. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES Co. LTD. (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Xiang Liu (Hefei, China) and Bin Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a substrate and a stacked structure located on the substrate; a doped region located between the stacked structure and the substrate, where...