US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES on Feb. 17 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,262, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES Co. LTD. (Beijing).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Changli Zhu (Hefei, China), Jinguo Fang (Hefei, China) and Jiawei Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The method of manufacturing the semiconductor structure includes: providing a base, where contact structures arranged at intervals are formed on a surface o...