US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, Changxin Jidian (Beijing) Memory Technologies on April 7 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,735, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and Changxin Jidian (Beijing) Memory Technologies Co. Ltd. (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Zhaohong Lv (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes: a substrate, a first dielectric layer, a second dielectric layer, and a gate structure, where an active region is provided in the substrate, and a source ...