US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Nov. 3 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,254, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Guangsu Shao (Hefei City, China), Deyuan Xiao (Hefei City, China), Yunsong Qiu (Hefei City, China) and Mengkang Yu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a plurality of active pillars, a dielectric layer that is di...