US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Feb. 17 for "Semiconductor structure and method for manufacturing the same, memory and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,270, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and method for manufacturing the same, memory and method for manufacturing the same" was invented by Deyuan Xiao (Hefei, China), Yong Yu (Hefei, China) and Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor structure and a method for manufacturing the same, a memory device and a method for manufacturing the same. The semiconductor structure includes at least one transistor. Each of the at least one transistor includes a cha...