US Patent Issued to CHANGXI MEMORY TECHNOLOGIES on July 15 for "Method for manufacturing semiconductor structure, and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,192, issued on July 15, was assigned to CHANGXI MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure, and semiconductor structure" was invented by Yexiao Yu (Hefei, China), Zhongming Liu (Hefei, China), Xinman Cao (Hefei, China), Jia Fang (Hefei, China) and Jiayun Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate, a first mask and a second mask, etching the substrate by respectively using the first mask and the second mask, so as to form first grooves and second grooves on the substrate, wherein regions, in the ...