US Patent Issued to CHANGXI MEMORY TECHNOLOGIES on July 15 for "DRC test pattern generation method and apparatus, electronic device, and storage medium" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,196, issued on July 15, was assigned to CHANGXI MEMORY TECHNOLOGIES INC. (Hefei, China).

"DRC test pattern generation method and apparatus, electronic device, and storage medium" was invented by Chuanjiang Chen (Hefei, China), Li Bai (Hefei, China) and Kang Zhao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A DRC test pattern generation method includes: receiving a DRC test pattern generation request, the DRC test pattern generation request carrying the number of correct patterns and the number of erroneous patterns; acquiring layout design rule information and corresponding layer configuration information, the layer configuration inf...