US Patent Issued to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE on March 3 for "Magneto resistive memory device" (French Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,451, issued on March 3, was assigned to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris).

"Magneto resistive memory device" was invented by Victorien Brecte (Aix-en-Provence, France), Julien Louche (Saint-Martin-le-Vinoux, France) and Fabien Leroy (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magneto resistive memory device including a memory array with at least one bit line (BL) and at least one source line (SL, SLB), the bit line (BL) and the at least one source line (SL, SLB) associated with a plurality of memory cells each presenting a magnetic tunnel junction and each presenting at least one selection transistor (RT) to...