US Patent Issued to Centre National de la Recherche Scientifique, Universite Paris-Saclay, Commissariat a l'Energie Atomique et aux Energies Alternatives on Aug. 25 for "Method for fabricating an asymmetric SOT-MRAM memory cell unit, and memory cell unit obtained by implementing this method" (French Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,044, issued on Aug. 25, was assigned to Centre National de la Recherche Scientifique (Paris), Universite Paris-Saclay (Gif-sur-yvette, France) and Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris).

"Method for fabricating an asymmetric SOT-MRAM memory cell unit, and memory cell unit obtained by implementing this method" was invented by Gilles Gaudin (Corenc, France), Ioan Mihai Miron (Grenoble, France), Olivier Boulle (Grenoble, France) and Dafine Ravelosona (Villiers le Bacle, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating an asymmetric SOT-MRAM memory cell unit, the memory cell unit including a ...