US Patent Issued to Centrasky Crystal Science (Ningbo) Semiconductor Materials on Aug. 11 for "Device and method for growing silicon carbide single crystal based on PVT method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,928, issued on Aug. 11, was assigned to Centrasky Crystal Science (Ningbo) Semiconductor Materials Co. Ltd. (Ningbo, China).

"Device and method for growing silicon carbide single crystal based on PVT method" was invented by Yuan Ma (Ningbo, China), Weiming Xue (Ningbo, China) and Yaobo Pan (Ningbo, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and a method for growing a silicon carbide single crystal based on a PVT method are provided. The device comprises a growth chamber, a crucible, one or more lifting rods, and a stock bin for holding raw materials. The crucible, the lifting rods and the stock bin are located within the growth ch...