US Patent Issued to CENTER FOR EXCELLENCE IN BRAIN SCIENCE AND INTELLIGENCE TECHNOLOGY, CHINESE ACADEMY OF SCIENCES on July 14 for "Flexible electrode for brain and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,678,616, issued on July 14, was assigned to CENTER FOR EXCELLENCE IN BRAIN SCIENCE AND INTELLIGENCE TECHNOLOGY, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Flexible electrode for brain and method for manufacturing same" was invented by Xue Li (Shanghai), Zhengtuo Zhao (Shanghai), Xiaocheng Li (Shanghai) and Chengyao Wang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a flexible electrode for a brain and a method for manufacturing the same. Provided is a flexible electrode for the brain, which comprises a cortical attachment portion that can be implanted into the brain, and one or more deep implantation portions, ...