US Patent Issued to Carl Zeiss SMT on Oct. 6 for "Method for electron beam-induced processing of a defect of a microlithographic photomask" (German Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,754,470, issued on Oct. 6, was assigned to Carl Zeiss SMT GmbH (Oberkochen, Germany).

"Method for electron beam-induced processing of a defect of a microlithographic photomask" was invented by Gilles Tabbone (Oberkochen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of: a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and b) producing at least one image of the photomask, in which the region of the defect ...