ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,782,803, issued on Nov. 3, was assigned to Carl Zeiss SMT GmbH (Oberkochen, Germany).
"Method and apparatus for etching a lithography mask" was invented by Fan Tu (Dieburg, Germany), Horst Schneider (Wiesbaden, Germany), Markus Bauer (Schneckenlohe, Germany), Petra Spies (Mainz, Germany), Maximilian Rumler (Darmstadt, Germany) and Christian Felix Hermanns (Frankfurt am Main, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "Method for the particle beam-induced etching of a lithography mask, more particularly a non-transmissive EUV lithography mask, having the steps of: a) providing the lithography mask in a process atmosphere, b) beaming a focused p...