US Patent Issued to Carl Zeiss MultiSEM on Nov. 3 for "Method for defect detection in a semiconductor sample in sample images with distortion" (German Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,178, issued on Nov. 3, was assigned to Carl Zeiss MultiSEM GmbH (Oberkochen, Germany).

"Method for defect detection in a semiconductor sample in sample images with distortion" was invented by Thomas Korb (Schwabisch Gmund, Germany), Jens Timo Neumann (Aalen, Germany), Ulrich Hofmann (Munich), Sven Meyer (Rauenberg, Germany) and Thomas C. Chust (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for defect detection in a sample, such as in a semiconductor sample, includes the following steps: providing a reference image of the sample; providing a sample image generated via a particle beam inspection system, wherein the sample image compris...