US Patent Issued to CANSEMI TECHNOLOGY on March 17 for "Laterally diffused metal oxide semiconductor device and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,698, issued on March 17, was assigned to CANSEMI TECHNOLOGY INC. (Guangzhou, China).

"Laterally diffused metal oxide semiconductor device and preparation method thereof" was invented by Haiyan Huang (Guangzhou, China) and Rilin Zhang (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an LDMOS device and a preparation method thereof, including: providing a substrate including a first drift region of a first conductivity type and a body region of a second conductivity type; forming a first gate structure and a first blocking structure, where the first gate structure is formed above a portion of the body r...