US Patent Issued to CAMBRIDGE ENTERPRISE on June 23 for "Method for porosifying a material and semiconductor structure" (British Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,889, issued on June 23, was assigned to CAMBRIDGE ENTERPRISE LTD (Cambridge, Great Britain).

"Method for porosifying a material and semiconductor structure" was invented by Tongtong Zhu (Cambridge, Great Britain), Rachel A. Oliver (Cambridge, Great Britain) and Yingjun Liu (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5x1017 cm-3, beneath a surface layer of a second III-nitride material, having a...