US Patent Issued to Cactus Materials on Aug. 25 for "Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates" (Arizona Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,904, issued on Aug. 25, was assigned to Cactus Materials Inc. (Tempe, Ariz.).

"Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates" was invented by Rafiqul Islam (Gilbert, Ariz.) and Sager Ayyoub (Glendale, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor substrate having a deep junction, forming at least one p+ region (n+ region) on a front side of a p-type (n-type) high-resistance wafer; and forming at least one n+ region (p+ region) on a front side of a n-type (p-type) high-resistance wafer. The method further includes aligning the at least one p...