US Patent Issued to BTQ Technologies on July 15 for "Non-volatile storage of secure data in 6T SRAM cells using hot carrier injection" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,987, issued on July 15, was assigned to BTQ Technologies Corp. (Vancouver, Canada).

"Non-volatile storage of secure data in 6T SRAM cells using hot carrier injection" was invented by Zachary Irving Belateche (Pasadena, Calif.), Vincent Cheung (Pasadena, Calif.), Chandler Mills Watson (Pasadena, Calif.) and Sean Patrick Hackett (Pasadena, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A processor has a Static Random Access Memory (SRAM) array with individual SRAM cells, each individual SRAM cell has six transistors including a first access transistor, a second access transistor, a first N-Channel Metal-Oxide Semiconductor (NMOS) transistor cro...