US Patent Issued to BOLB on July 21 for "Group III nitride light emitting diode with an electron blocking structure" (American, Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,299, issued on July 21, was assigned to BOLB Inc. (Livermore, Calif.).

"Group III nitride light emitting diode with an electron blocking structure" was invented by Jianping Zhang (Arcadia, Calif.), Ying Gao (Beijing), Ling Zhou (Dublin, Calif.) and Bin Zhang (Livermore, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode has a substrate, a group III nitride layer over the substrate for electron supply and n-type ohmic contact formation and a light-emitting multiple-quantum well active region over the group III nitride layer. An electron blocking layer is over the light-emitting multiple-quantum well active region, the electr...