US Patent Issued to BOE Technology Group on Jan. 27 for "Tunneling field effect transistor and manufacturing method thereof, display panel and display apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,506, issued on Jan. 27, was assigned to BOE Technology Group Co. Ltd. (Beijing).

"Tunneling field effect transistor and manufacturing method thereof, display panel and display apparatus" was invented by Jiayu He (Beijing), Yan Qu (Beijing), Ce Ning (Beijing), Hehe Hu (Beijing), Zhengliang Li (Beijing), Nianqi Yao (Beijing), Jie Huang (Beijing), Kun Zhao (Beijing), Feifei Li (Beijing) and Liping Lei (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer...