US Patent Issued to BOE TECHNOLOGY GROUP on Feb. 10 for "Thin film transistor and manufacturing method therefor, and display apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,354, issued on Feb. 10, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing).

"Thin film transistor and manufacturing method therefor, and display apparatus" was invented by Zhaohui Qiang (Beijing), Chao Li (Beijing), Huiqin Zhang (Beijing), Li Qiang (Beijing), Feng Guan (Beijing) and Zhiwei Liang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode regio...