US Patent Issued to Board of Regents, The University of Texas System on May 26 for "Toggle SOT-MRAM architecture with self-terminating write operation" (Texas Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,180, issued on May 26, was assigned to Board of Regents, The University of Texas System (Austin, Texas).

"Toggle SOT-MRAM architecture with self-terminating write operation" was invented by Joseph S. Friedman (Dallas) and Naimul Hassan (Dallas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile magnetoresistive random-access memory device is provided. The device comprises a three-terminal spin-orbit torque magnetic tunnel junction (MTJ) with perpendicular anisotropy. The MTJ comprises a fixed ferromagnetic layer, a free ferromagnetic layer, a tunnel barrier between the fixed and free ferromagnetic layers, and a heavy metal layer under the f...