US Patent Issued to Board of Regents, The University of Texas System on March 24 for "Switching transient based junction temperature estimation of SiC MOSFETs with aging compensation" (Texas Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,799, issued on March 24, was assigned to Board of Regents, The University of Texas System (Austin, Texas).

"Switching transient based junction temperature estimation of SiC MOSFETs with aging compensation" was invented by Bilal Akin (Richardson, Texas), Masoud Farhadi (Dallas), Abdolrahman Sajadi (Dallas) and Bhanu Teja Vankayalapati (Richmond, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus and method are provided for estimating junction temperature in a metal-oxide-semiconductor field-effect transistor (MOSFET), such as a silicon carbide (SiC) MOSFET, by capturing switching transients in a source path. A measurement circuit dete...