ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,137, issued on Aug. 11, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Memory and access method therefor, and electronic device" was invented by Zhengyong Zhu (Beijing), Bokmoon Kang (Beijing), Dan Wang (Beijing) and Chao Zhao (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory. The memory includes at least one memory array and at least one control circuit, wherein the memory array comprises a plurality of memory cells arranged in an array as well as read wordlines and read bitlines for read operations, wherein each of the memory cells comprises a first transistor and a second transistor. The co...