US Patent Issued to Beijing North Gaoye Technology on July 28 for "Infrared detector with multi-layer structure based on CMOS process" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,554, issued on July 28, was assigned to Beijing North Gaoye Technology Co. Ltd. (Beijing).

"Infrared detector with multi-layer structure based on CMOS process" was invented by Guangjie Zhai (Beijing), Pei Wu (Beijing), Hui Pan (Beijing) and Guangqiang Zhai (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared detector with a multi-layer structure based on a CMOS process. A CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both fabricated by using the CMOS process, and a CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL p...