ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,831, issued on Aug. 26, was assigned to Beijing E-Town Semiconductor Technology Co. Ltd. (Beijing) and Mattson Technology Inc. (Fremont, Calif.).
"Dual frequency matching circuit for inductively coupled plasma (ICP) loads" was invented by Maolin Long (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can ...