US Patent Issued to Beijing BOE Technology Development on Oct. 14 for "Manufacturing method of patterned quantum dot light-emitting layer and manufacturing method of light-emitting device" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,453, issued on Oct. 14, was assigned to Beijing BOE Technology Development Co. Ltd. (Beijing).

"Manufacturing method of patterned quantum dot light-emitting layer and manufacturing method of light-emitting device" was invented by Zhuo Chen (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a patterned quantum dot light-emitting layer includes: forming a sacrificial layer on a side of a base substrate, wherein the sacrificial layer includes a first component and a second component mixed in the first component; forming a patterned photoresist layer on a side of the sacrificial layer facing away from the base substrate; e...