US Patent Issued to Beijing BOE Technology Development, BOE TECHNOLOGY GROUP on May 26 for "Thin film transistor, manufacturing method thereof and circuit" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,833, issued on May 26, was assigned to Beijing BOE Technology Development Co. Ltd. (Beijing) and BOE TECHNOLOGY GROUP Co. LTD. (Beijing).

"Thin film transistor, manufacturing method thereof and circuit" was invented by Wei Guo (Beijing) and Hu Meng (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes: a substrate; a gate electrode; an active layer including a first active pattern and a second active pattern, where the first active pattern includes a first active sub-pattern, the first active sub-pattern comprises a first active region and a first source-drain contact region, the first source-drain contact region is ...