US Patent Issued to BASF on March 31 for "Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten" (Taiwanese, Dutch, German Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,590,274, issued on March 31, was assigned to BASF SE (Ludwigshafen am Rhein, Germany).

"Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten" was invented by Joannes Theodorus Valentinus Hoogboom (BP Eindhoven, Netherlands), Andreas Klipp (Ludwigshafen, Germany), Jhih Jheng Ke (Taoyuan, Taiwan), Che Wei Wang (Taoyuan, Taiwan) and Chia Ching Ting (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash r...