US Patent Issued to BASF on July 14 for "Composition, its use and a process for selectively etching silicon-germanium material" (Taiwanese, German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,021, issued on July 14, was assigned to BASF SE (Ludwigshafen am Rhein, Germany).

"Composition, its use and a process for selectively etching silicon-germanium material" was invented by Francisco Javier Lopez Villanueva (Ludwigshafen, Germany), Andreas Klipp (Ludwigshafen, Germany), Sabine Frischhut (Ludwigshafen, Germany), Chih Hui Lo (Taoyuan, Taiwan) and Mei Chin Shen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a layer including silicon, the composition including: (a) 5 to 15% by weight of an oxidizin...