US Patent Issued to BAE Systems Information and Electronic Systems Integration on June 9 for "Method of producing large GaAs and GaP infrared windows" (New Hampshire, Massachusetts Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,650,538, issued on June 9, was assigned to BAE Systems Information and Electronic Systems Integration Inc. (Nashua, N.H.).

"Method of producing large GaAs and GaP infrared windows" was invented by Peter G. Schunemann (Hollis, N.H.) and Kevin T. Zawilski (Arlington, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method ex...