US Patent Issued to AUO on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,432, issued on Sept. 8, was assigned to AUO Corp. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Shang-Lin Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate, a first silicon nitride (SiN) layer, a second SiN layer, an oxide insulation layer, and a first metal oxide layer. The first SiN layer is located on or above the substrate. The second SiN layer is located above the first SiN layer. Both the first SiN layer and the second SiN layer include a hydrogen...