ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,232, issued on July 21, was assigned to AUO Corp. (Hsinchu City, Taiwan).
"Manufacturing method of thin film transistor" was invented by Ya-Qin Huang (Hsinchu, Taiwan), Yi-Da He (Hsinchu, Taiwan) and Chih-Hung Tsai (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a semiconductor layer, a gate, a source and a drain. The semiconductor layer includes a first heavily doped region, a second heavily doped region, a bridge region, a first channel region, a second channel region, a first lightly doped region and a second lightly doped region. The first lightly doped region connects the bridge region and the fir...