ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,729,434, issued on Sept. 8, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method for filling a gap in a three-dimensional structure on a semiconductor substrate" was invented by KiKang Kim (Yongin-si, South Korea), Hak-Yong Kwon (Yongin-si, South Korea), HieChul Kim (Hwaseong-si, South Korea), SungKyu Kang (Hwaseong-si, South Korea), SeungHwan Lee (Anseong-si, South Korea), SungBae Kim (Yongin-si, South Korea), JongHyun Ahn (Hwaseong-si, South Korea), SeongRyeong Kim (Hwaseong-si, South Korea), KyuMin Kim (Anyang-si, South Korea) and YoungMin Kim (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "This application rela...