US Patent Issued to ASM IP Holding on Oct. 20 for "Plasma enhanced epitaxial chemical vapor deposition system" (Arizona Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,834, issued on Oct. 20, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Plasma enhanced epitaxial chemical vapor deposition system" was invented by Yanfu Lu (Phoenix) and Alexandros Demos (Scottsdale, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may ...