US Patent Issued to ASM IP Holding on Oct. 20 for "Deposition of flowable SiCN films by plasma enhanced atomic layer deposition" (Japanese, Belgian Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,763, issued on Oct. 20, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Deposition of flowable SiCN films by plasma enhanced atomic layer deposition" was invented by Shinya Yoshimoto (Tama, Japan), Jhoelle Roche Guhit (Tama, Japan), Makoto Igarashi (Fuchu, Japan), Hideaki Fukuda (Hachioji, Japan), Aurelie Kuroda (Chofu, Japan), Timothee Blanquart (Oud-Heverlee, Belgium) and Takahiro Onuma (Chofu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which de...