ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,768, issued on May 26, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Selective deposition of material comprising noble metal" was invented by Chao Zhang (Helsinki), Mikko Ritala (Espoo, Finland) and Eva Tois (Espoo, Finland).

According to the abstract* released by the U.S. Patent & Trademark Office: "The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. In the disclosure, a material comprising noble metal is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first ...