ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,885, issued on June 23, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Systems and methods for deposition of molybdenum for source/drain contacts" was invented by Jiyeon Kim (Tempe, Ariz.), Petri Raisanen (Gilbert, Ariz.), Dong Li (Phoenix) and Eric James Shero (Phoenix).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first ...