ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,916, issued on July 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method, system and apparatus for forming a metal sulfide layer" was invented by Patricio Eduardo Romero (Wilsele, Belgium), Charles Dezelah (Helsinki), Michael Eugene Givens (Oud-Heverlee, Belgium) and Giuseppe Alessio Verni (Vantaa, Finland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-fr...