ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,061, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber" was invented by Xing Lin (Chandler, Ariz.), Peipei Gao (Tempe, Ariz.), Fei Wang (Tempe, Ariz.), John Tolle (Gilbert, Ariz.), Bubesh Babu Jotheeswaran (Gilbert, Ariz.), Vish Ramanathan (Tempe, Ariz.) and Eric Hill (Groveland, Mass.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention ...