ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,546,000, issued on Feb. 10, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Substrate processing method" was invented by Seungju Chun (Hwaseong-si, South Korea) and SeongMin Han (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of forming a conformal film on a recess of a substrate in a reaction chamber by repeating a cycle comprising forming a first film comprising supplying a silicon source and a reactant and applying a first power from a power supply unit to the reaction chamber while supplying the silicon source and the reactant, treating the first film by applying a second power from the power s...